BYV29-600 Datasheet, PDF (1/6 Pages) NXP Semiconductors – Rectifier diodes

Philips Semiconductors
Rectifier diodes
ultrafast
Product specification
BYV29-600
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• High thermal cycling performance
• Low thermal resistance
SYMBOL
k
1
QUICK REFERENCE DATA
V_R = 600V
a
V_F ≤ 1.03 V
2
I_F(AV) = 9 A
t_rr ≤ 60 ns
GENERAL DESCRIPTION
Ultra-fast, epitaxial rectifier diodes
intended for use as output rectifiers
in high frequency switched mode
power supplies.
The BYV29-600 is supplied in the
conventional leaded SOD59
(TO220AC) package.
PINNING
PIN
DESCRIPTION
1 cathode
2 anode
tab cathode
SOD59 (TO220AC)
tab
12
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
V_RRM
V_RWM
V_R
I_F(AV)
I_FRM
I_FSM
T_stg
T_j
Peak repetitive reverse voltage
-
Crest working reverse voltage
-
Continuous reverse voltage
-
Average forward current¹
square wave; δ = 0.5;
-
T_mb ≤ 120 ˚C
Repetitive peak forward current t = 25 µs; δ = 0.5;
-
T_mb ≤ 120 ˚C
Non-repetitive peak forward t = 10 ms
-
current.
t = 8.3 ms
-
sinusoidal; with reapplied
V_RRM(max)
Storage temperature
-40
Operating junction temperature
-
MAX.
600
600
600
9
18
70
77
150
150
UNIT
V
V
V
A
A
A
A
˚C
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
R_{th j-mb}
R_{th j-a}
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
in free air.
MIN. TYP. MAX. UNIT
-
-
2.5 K/W
-
60
- K/W
1 Neglecting switching and reverse current losses.
February 2000
1
Rev 1.100