BYV143F Datasheet, PDF (1/5 Pages) NXP Semiconductors – Rectifier diodes schottky barrier

Philips Semiconductors
Rectifier diodes
schottky barrier
Product specification
BYV143F series
GENERAL DESCRIPTION
Dual, low leakage, platinum barrier,
schottky rectifier diodes in a full pack
plastic envelope, featuring low
forward voltage drop, absence of
stored charge. and guaranteed
reverse surge capability. The devices
are intended for use in switched mode
power supplies and high frequency
circuits in general where low
conduction and zero switching losses
are important.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX.
V_RRM
V_F
I_O(AV)
BYV143F- 35
Repetitive peak reverse 35
voltage
Forward voltage
0.62
Average output current
20
(both diodes conducting)
MAX.
40
40
0.62
20
MAX.
45
45
0.62
20
UNIT
V
V
A
PINNING - SOT186
PIN
DESCRIPTION
1 anode 1 (a)
2 cathode (k)
3 anode 2 (a)
PIN CONFIGURATION
case
12 3
SYMBOL
a1
a2
1
3
k2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
V_RRM
V_RWM
V_R
I_O(AV)
I_O(RMS)
I_FRM
I_FSM
I²t
I_RRM
I_RSM
T_stg
T_j
Repetitive peak reverse voltage
-
Crest working reverse voltage
-
Continuous reverse voltage
T_hs ≤ 112 ˚C
-
Average output current (both square wave; δ = 0.5;
-
diodes conducting)
T_hs ≤ 87 ˚C
RMS output current (both
-
diodes conducting)
Repetitive peak forward current t = 25 µs; δ = 0.5;
-
per diode
T_hs ≤ 87 ˚C
Non-repetitive peak forward t = 10 ms
-
current, per diode
t = 8.3 ms
-
sinusoidal T_j = 125 ˚C prior
to surge; with reapplied
I²t for fusing
V_RRM(max)
t = 10 ms
-
Repetitive peak reverse current t_p = 2 µs; δ = 0.001
-
per diode.
Non-repetitive peak reverse t_p = 100 µs
-
current per diode.
Storage temperature
-65
Operating junction temperature
-
MAX.
-35 -40 -45
35 40 45
35 40 45
35 40 45
20
20
30
100
110
50
1
1
175
150
UNIT
V
V
V
A
A
A
A
A
A²s
A
A
˚C
˚C
August 1996
1
Rev 1.100