BYV118F Datasheet, PDF (1/6 Pages) NXP Semiconductors – Rectifier diodes Schottky barrier

Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
BYV118F, BYV118X series
FEATURES
SYMBOL
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Isolated package
a1
a2
1
3
k2
QUICK REFERENCE DATA
V_R = 35 V/ 40 V/ 45 V
I_O(AV) = 10 A
V_F ≤ 0.6 V
GENERAL DESCRIPTION
Dual, common cathode schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended
for use as output rectifiers in low voltage, high frequency switched mode power supplies.
The BYV118F series is supplied in the SOT186 package.
The BYV118X series is supplied in the SOT186A package.
PINNING
SOT186
SOT186A
PIN
DESCRIPTION
case
case
1 anode 1 (a)
2 cathode (k)
3 anode 2 (a)
tab isolated
12 3
12 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V_RRM
V_RWM
V_R
I_O(AV)
I_FRM
I_FSM
I_RRM
T_j
T_stg
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
T_hs ≤ 97 ˚C
BYV118F-
35
40
45
BYV118X-
35
40
45
-
35
40
45
V
-
35
40
45
V
-
35
40
45
V
Average rectified output
square wave; δ = 0.5;
-
10
A
current (both diodes
conducting)
T_hs ≤ 107 ˚C
Repetitive peak forward
square wave; δ = 0.5;
-
10
A
current per diode
T_hs ≤ 107 ˚C
Non-repetitive peak forward t = 10 ms
-
100
A
current per diode
t = 8.3 ms
-
110
A
sinusoidal; T_j = 125 ˚C prior to
surge; with reapplied V_RRM(max)
Peak repetitive reverse
pulse width and repetition rate -
1
A
surge current per diode
Operating junction
limited by T_{j max}
-
150
˚C
temperature
Storage temperature
- 65
175
˚C
May 1998
1
Rev 1.100