BYV10X-600P_15 Datasheet, PDF (1/9 Pages) NXP Semiconductors – Ultrafast power diode

BYV10X-600P
Ultrafast power diode
3 January 2014
Product data sheet
1. General description
Ultrafast power diode in a SOD113 (2-lead TO-220F) plastic package.
2. Features and benefits
• Fast switching
• Isolated plastic package
• Low leakage current
• Low forward voltage drop
• Low thermal resistance
• Soft recovery characteristic
3. Applications
• High frequency switched-mode power supplies
• Discontinuous Current Mode (DCM) Power Factor Correction (PFC)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
V_RRM
repetitive peak reverse
voltage
I_F(AV)
average forward
current
δ = 0.5 ; T_h ≤ 71 °C; square-wave
pulse; Fig. 1; Fig. 2; Fig. 3
Static characteristics
V_F
forward voltage
I_F = 10 A; T_j = 150 °C; Fig. 6
Dynamic characteristics
t_rr
reverse recovery time I_F = 1 A; V_R = 30 V; dI_F/dt = 100 A/µs;
T_j = 25 °C; Fig. 7
Min Typ Max Unit
-
-
600 V
-
-
10
A
-
-
1.6 V
-
20
-
ns
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