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BYV10EX-600P_15 Datasheet, PDF (1/11 Pages) NXP Semiconductors – Ultrafast power diode | |||
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BYV10EX-600P
Ultrafast power diode
25 September 2014
Product data sheet
1. General description
Ultrafast power diode in a SOD113 (2-lead TO-220F) plastic package.
2. Features and benefits
⢠Fast switching
⢠Isolated plastic package
⢠Low leakage current
⢠Low forward voltage drop
⢠Low thermal resistance
⢠Soft recovery characteristic
⢠Enhanced avalanche energy capability
3. Applications
⢠High frequency switched-mode power supplies
⢠Discontinuous Current Mode (DCM) Power Factor Correction (PFC)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VRRM
repetitive peak reverse
voltage
IF(AV)
average forward
current
δ = 0.5; Th ⤠71 °C; square-wave pulse;
Fig. 1; Fig. 2; Fig. 3
Static characteristics
VF
forward voltage
IF = 10 A; Tj = 150 °C; Fig. 6
Dynamic characteristics
trr
reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 50 A/µs;
Tj = 25 °C; Fig. 7
Avalanche energy
EAS
non-repetitive
IR = 2.6 A; Tj(init) = 25 °C; L = 15 mH
avalanche energy
Min Typ Max Unit
-
-
600 V
-
-
10
A
-
-
1.6 V
-
35
50
ns
-
50
-
mJ
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