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| BYV10ED-600P_15 Datasheet, PDF (1/11 Pages) NXP Semiconductors – Ultrafast power diode | |||
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BYV10ED-600P
Ultrafast power diode
24 July 2015
Product data sheet
1. General description
Enhanced ultrafast power diode in a SOT428 (DPAK) plastic package.
2. Features and benefits
⢠High thermal cycling performance
⢠Soft recovery characteristic
⢠Low on-state losses
⢠Surface-mountable package
⢠Low thermal resistance
⢠Enhanced avalanche energy capability
3. Applications
⢠Dual Mode (DCM and CCM) PFC
⢠Power Factor Correction (PFC) for Interleaved Topology
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VRRM
repetitive peak reverse
voltage
IF(AV)
average forward
current
δ = 0.5 ; Tmb ⤠118 °C; Square-wave
pulse; Fig. 1; Fig. 2; Fig. 3
IFRM
repetitive peak forward δ = 0.5 ; tp = 25 µs; Tmb ⤠118 °C;
current
Square-wave pulse
IFSM
non-repetitive peak
tp = 10 ms; Tj(init) = 25 °C; SIN; Fig. 4
forward current
tp = 8.3 ms; Tj(init) = 25 °C; SIN; Fig. 4
Static characteristics
VF
forward voltage
IF = 10 A; Tj = 25 °C; Fig. 6
IF = 10 A; Tj = 150 °C; Fig. 6
Dynamic characteristics
trr
reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 50 A/µs;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
-
-
600 V
-
-
10
A
-
-
20
A
-
-
70
A
-
-
80
A
-
1.5 2
V
-
-
1.6 V
-
35
50
ns
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