BYT28 Datasheet, PDF (1/5 Pages) NXP Semiconductors – Dual rectifier diodes ultrafast

Philips Semiconductors
Dual rectifier diodes
ultrafast
Product specification
BYT28 series
FEATURES
SYMBOL
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• High thermal cycling performance
• Low thermal resistance
a1
a2
1
3
k2
QUICK REFERENCE DATA
V_R = 300 V/ 400 V/ 500 V
V_F ≤ 1.05 V
I_O(AV) = 10 A
t_rr ≤ 60 ns
GENERAL DESCRIPTION
Dual, common cathode, ultra-fast,
epitaxial rectifier diodes intended
for use as output rectifiers in high
frequency switched mode power
supplies.
The BYT28 series is supplied in the
conventional leaded SOT78
(TO220AB) package.
PINNING
PIN
DESCRIPTION
1 cathode
2 anode
tab cathode
SOT78 (TO220AB)
tab
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
V_RRM
V_R
I_O(AV)
I_FSM
T_stg
T_j
Repetitive peak reverse voltage
Continuous reverse voltage
T_mb ≤ 147˚C
BYT28
-
-
Average rectified output current square wave; δ = 0.5;
-
(both diodes conducting)¹
T_mb ≤ 115 ˚C
Non-repetitive peak forward t = 10 ms
-
current per diode.
t = 8.3 ms
-
sinusoidal; with reapplied
V_RRM(max)
Storage temperature
-40
Operating junction temperature
-
-300
300
300
MAX.
-400
400
400
10
50
55
150
150
-500
500
500
UNIT
V
V
A
A
A
˚C
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
R_{th j-hs}
R_{th j-a}
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
per diode
both diodes conducting
in free air.
MIN.
-
-
-
TYP.
-
-
60
MAX.
4.5
3.0
-
UNIT
K/W
K/W
K/W
1 Neglecting switching and reverse current losses.
October 1998
1
Rev 1.400