BYR29F Datasheet, PDF (1/6 Pages) NXP Semiconductors – Rectifier diodes ultrafast

Philips Semiconductors
Rectifier diodes
ultrafast
Product specification
BYR29F series
FEATURES
SYMBOL
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
k
a
• Reverse surge capability
1
2
• High thermal cycling performance
• Isolated mounting tab
GENERAL DESCRIPTION
Ultra-fast, epitaxial rectifier diodes
intended for use as output rectifiers
in high frequency switched mode
power supplies.
The BYR29F series is supplied in
the conventional leaded SOD100
package.
PINNING
PIN
DESCRIPTION
1 cathode
2 anode
tab isolated
QUICK REFERENCE DATA
V_R = 500 V/ 600 V/ 700 V /
800 V
V_F ≤ 1.5 V
I_F(AV) = 8 A
t_rr ≤ 75 ns
SOD100
case
12
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
V_RRM
V_RWM
V_R
I_F(AV)
I_FRM
I_FSM
T_stg
T_j
Peak repetitive reverse voltage
BYR29F
-
Crest working reverse voltage
-
Continuous reverse voltage
T_hs ≤ 136 ˚C
-
Average forward current¹
square wave;
-
δ = 0.5;
T_hs ≤ 73 ˚C
Repetitive peak forward current t = 25 µs; δ = 0.5;
-
T_hs ≤ 73 ˚C
Non-repetitive peak forward t = 10 ms
-
current
t = 8.3 ms
-
sinusoidal; with
Storage temperature
reapplied V_RRM(max)
-40
Operating junction temperature
-
-500
500
500
500
MAX.
-600
600
600
600
-700
700
700
700
8
16
60
66
150
150
-800
800
800
800
UNIT
V
V
V
A
A
A
A
˚C
˚C
1 Neglecting switching and reverse current losses
September 1998
1
Rev 1.400