BYQ72EW-200_15 Datasheet, PDF (1/11 Pages) NXP Semiconductors – Dual ultrafast power diode

BYQ72EW-200
Dual ultrafast power diode
14 May 2015
Product data sheet
1. General description
Dual ultrafast power diode in a SOT429 (3-lead TO-247) plastic package.
2. Features and benefits
• Very low on-state loss
• Fast switching
• Soft recovery characteristic minimizes power consuming oscillations
• High reverse surge capability
• High thermal cycling performance
• Low thermal resistance
3. Applications
Output rectifiers in high-frequency switched-mode power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
V_RRM
repetitive peak reverse
voltage
I_F(AV)
average forward
current
δ = 0.5; T_mb ≤ 113 °C; square-wave
pulse; per diode; Fig. 1; Fig. 2; Fig. 3
Static characteristics
V_F
forward voltage
I_F = 15 A; T_j = 150 °C; Fig. 6
Dynamic characteristics
t_rr
reverse recovery time I_F = 1 A; V_R = 30 V; dI_F/dt = 100 A/µs;
T_j = 25 °C; Fig. 7
Min Typ Max Unit
-
-
200 V
-
-
15
A
-
0.78 0.9 V
-
18
25
ns
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