BYQ60EW Datasheet, PDF (1/6 Pages) NXP Semiconductors – Rectifier diodes ultrafast, rugged

Philips Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYQ60EW series
FEATURES
SYMBOL
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
a1
a2
1
3
k2
GENERAL DESCRIPTION
Dual, common cathode, ultra-fast,
epitaxial rectifier diodes intended
for use as output rectifiers in high
frequency switched mode power
supplies.
The BYQ60EW series is supplied in
the conventional leaded SOT429
(TO247) package.
PINNING
PIN
DESCRIPTION
1 anode 1
2 cathode
3 anode 2
tab cathode
QUICK REFERENCE DATA
V_R = 150 V/ 200 V
V_F ≤ 0.85 V
I_O(AV) = 60 A
I_RRM ≤ 0.2 A
t_rr ≤ 35 ns
SOT429 (TO247)
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
V_RRM
V_RWM
V_R
I_O(AV)
I_FRM
I_FSM
I_RRM
I_RSM
T_stg
T_j
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
BYQ60EW
-
-
-
Average rectified output current square wave
-
(both diodes conducting)
δ = 0.5; T_mb ≤ 82 ˚C
Repetitive peak forward current t = 25 µs; δ = 0.5;
-
per diode
T_mb ≤ 82 ˚C
Non-repetitive peak forward t = 10 ms
-
current per diode
t = 8.3 ms
-
sinusoidal; with reapplied
V_RWM(max)
Repetitive peak reverse current t_p = 2 µs; δ = 0.001
-
per diode
Non-repetitive peak reverse t_p = 100 µs
-
current per diode
Storage temperature
-40
Operating junction temperature
-
ESD LIMITING VALUE
SYMBOL PARAMETER
V_C
Electrostatic discharge
capacitor voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
MAX.
-150
150
150
150
-200
200
200
200
60
60
380
414
UNIT
V
V
V
A
A
A
A
0.2
A
0.2
A
150
˚C
150
˚C
MIN.
-
MAX.
8
UNIT
kV
December 1998
1
Rev 1.000