BYQ30EB Datasheet, PDF (1/6 Pages) NXP Semiconductors – Rectifier diodes ultrafast, rugged

Philips Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYQ30EB series
GENERAL DESCRIPTION
Glass passivated high efficiency
rugged dual rectifier diodes in a
plastic envelope suitable for surface
mounting, featuring low forward
voltage drop, ultra-fast recovery
times and soft recovery
characteristic. These devices can
withstand reverse voltage transients
and have guaranteed reverse surge
and ESD capability. They are
intended for use in switched mode
power supplies and high frequency
circuits in general where low
conduction and switching losses are
essential.
QUICK REFERENCE DATA
SYMBOL PARAMETER
V_RRM
V_F
I_O(AV)
t_rr
I_RRM
BYQ30EB-
Repetitive peak reverse
voltage
Forward voltage
Output current (both
diodes conducting)
Reverse recovery time
Repetitive peak reverse
current per diode
MAX.
100
100
0.95
16
25
0.2
MAX.
150
150
0.95
16
25
0.2
MAX.
200
200
0.95
16
25
0.2
UNIT
V
V
A
ns
A
PINNING - SOT404
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1 no connection
2 cathode
mb
k
a
tab
3
3 anode
mb cathode
2
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
V_RRM
V_RWM
V_R
I_O(AV)
I_O(RMS)
I_FRM
I_FSM
I²t
I_RRM
I_RSM
T_stg
T_j
Repetitive peak reverse voltage
-
Crest working reverse voltage
-
Continuous reverse voltage
-
Output current (both diodes
square wave
-
conducting)¹
RMS forward current
δ = 0.5; T_mb ≤ 104 ˚C
-
Repetitive peak forward current t = 25 µs; δ = 0.5;
-
per diode
T_mb ≤ 104 ˚C
Non-repetitive peak forward t = 10 ms
-
current per diode
t = 8.3 ms
-
sinusoidal; with reapplied
I²t for fusing
V_RWM(max)
t = 10 ms
-
Repetitive peak reverse current t_p = 2 µs; δ = 0.001
-
per diode
Non-repetitive peak reverse t_p = 100 µs
-
current per diode
Storage temperature
-40
Operating junction temperature
-
-100
100
100
100
MAX.
-150
150
150
150
16
23
16
100
110
50
0.2
0.2
150
150
-200
200
200
200
UNIT
V
V
V
A
A
A
A
A
A²s
A
A
˚C
˚C
1 Neglecting switching and reverse current losses.
October 1997
1
Rev 1.000