BYQ30E Datasheet, PDF (1/8 Pages) NXP Semiconductors – Rectifier diodes ultrafast, rugged

Philips Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYQ30E, BYQ30EB, BYQ30ED series
FEATURES
SYMBOL
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
a1
a2
1
3
k2
QUICK REFERENCE DATA
V_R = 150 V/ 200 V
V_F ≤ 0.95 V
I_O(AV) = 16 A
I_RRM = 0.2 A
t_rr ≤ 25 ns
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power
supplies.
The BYQ30E series is supplied in the SOT78 conventional leaded package.
The BYQ30EB series is supplied in the SOT404 surface mounting package.
The BYQ30ED series is supplied in the SOT428 surface mounting package.
PINNING
SOT78 (TO220AB) SOT404
SOT428
PIN DESCRIPTION
tab
1 anode 1
tab
tab
2 cathode ¹
3 anode 2
tab cathode
1 23
2
13
2
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
V_RRM
V_RWM
V_R
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
BYQ30E/ BYQ30EB/ BYQ30ED
-
-
-
I_O(AV)
I_FRM
I_FSM
I_RRM
I_RSM
T_j
T_stg
Average rectified output
current (both diodes
square wave; δ = 0.5; T_mb ≤ 104 ˚C -
conducting)
Repetitive peak forward
current per diode
square wave; δ = 0.5; T_mb ≤ 104 ˚C -
Non-repetitive peak forward t = 10 ms
-
current per diode
t = 8.3 ms
-
Peak repetitive reverse
surge current per diode
sinusoidal; with reapplied V_RRM(max)
t_p = 2 µs; δ = 0.001
-
Peak non-repetitive reverse t_p = 100 µs
-
surge current per diode
Operating junction
-
temperature
Storage temperature
- 40
1. It is not possible to make connection to pin 2 of the SOT428 or SOT404 packages.
MAX.
-150
150
-200
200
150
200
150
200
16
16
80
88
0.2
0.2
150
150
UNIT
V
V
V
A
A
A
A
A
A
˚C
˚C
October 1998
1
Rev 1.200