BYQ28E-200E_15 Datasheet, PDF (1/11 Pages) NXP Semiconductors – Dual ultrafast power diodes

BYQ28E-200E
Dual ultrafast power diodes
Rev. 4 — 14 July 2011
Product data sheet
1. Product profile
1.1 General description
Dual ultrafast power diodes in a SOT78 (TO-220AB) plastic package. These diodes are
rugged with a guaranteed electrostatic discharge voltage capability.
1.2 Features and benefits
 Fast switching
 Guaranteed ESD capability
 High thermal cycling performance
 Low on-state losses
 Low thermal resistance
 Soft recovery minimizes
power-consuming oscillations
1.3 Applications
 Output rectifiers in high-frequency
switched-mode power supplies
1.4 Quick reference data
Table 1.
Symbol
V_RRM
I_O(AV)
Quick reference data
Parameter
repetitive peak reverse
voltage
average output current
I_FRM
repetitive peak forward
current
Static characteristics
V_F
forward voltage
Dynamic characteristics
t_rr
reverse recovery time
Electrostatic discharge
V_ESD
electrostatic discharge
voltage
Conditions
square-wave pulse; δ = 0.5 ;
T_mb ≤ 119 °C; both diodes
conducting; see Figure 1;
see Figure 2
δ = 0.5 ; t_p = 25 µs;
T_mb ≤ 119 °C; per diode;
square-wave pulse
I_F = 5 A; T_j = 150 °C;
see Figure 4
I_F = 1 A; V_R = 30 V;
dI_F/dt = 100 A/µs; T_j = 25 °C;
ramp recovery; see Figure 5
HBM; C = 250 pF; R = 1.5 kΩ;
all pins
Min Typ Max Unit
-
-
200 V
-
-
10 A
-
-
10 A
-
0.8 0.89 V
5
-
15 25 ns
-
-
8
kV