BYC10-600CT Datasheet, PDF (1/6 Pages) NXP Semiconductors – Rectifier diode ultrafast, low switching loss

Philips Semiconductors
Rectifier diode
ultrafast, low switching loss
Product specification
BYC10-600CT
FEATURES
• Dual diode
• Extremely fast switching
• Low reverse recovery current
• Low thermal resistance
• Reduces switching losses in
associated MOSFET
SYMBOL
a1
a2
1
3
k2
QUICK REFERENCE DATA
V_R = 600 V
V_F ≤ 1.75 V
I_O(AV) = 10 A
t_rr = 19 ns (typ)
APPLICATIONS
• Active power factor correction
• Half-bridge lighting ballasts
• Half-bridge/ full-bridge switched
mode power supplies.
The BYC10-600CT is supplied in
the SOT78 (TO220AB)
conventional leaded package.
PINNING
PIN
DESCRIPTION
1 anode 1
2 cathode
3 anode 2
tab cathode
SOT78 (TO220AB)
tab
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
V_RRM
V_RWM
V_R
I_O(AV)
I_FRM
I_FSM
T_stg
T_j
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average output current (both
diodes conducting)
Repetitive peak forward current
per diode
Non-repetitive peak forward
current per diode
Storage temperature
Operating junction temperature
T_mb ≤ 110 ˚C
δ=
T_mb
0.5; with
≤ 50 ˚C¹
reapplied
V_RRM(max);
δ=
T_mb
0.5; with
≤ 50 ˚C¹
reapplied
V_RRM(max);
t = 10 ms
t = 8.3 ms
sinusoidal; T_j = 150˚C prior to surge
with reapplied V_RWM(max)
MIN.
-
-
-
-
-
-
-
-40
-
MAX.
600
600
500
10
10
40
44
UNIT
V
V
V
A
A
A
A
150
˚C
150
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
R_{th j-mb}
R_{th j-a}
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
per diode
both diodes
in free air.
MIN.
-
-
-
TYP.
-
-
60
MAX.
2.5
2.2
-
UNIT
K/W
K/W
K/W
1 T_mb(max) limited by thermal runaway
October 1999
1
Rev 1.000