BY329F Datasheet, PDF (1/7 Pages) NXP Semiconductors – Rectifier diodes fast, soft-recovery

Philips Semiconductors
Rectifier diodes
fast, soft-recovery
Product specification
BY329F, BY329X series
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• High thermal cycling performance
• Isolated mounting tab
SYMBOL
k
1
QUICK REFERENCE DATA
V_R = 800 V/ 1000 V/ 1200 V
a
I_F(AV) = 8 A
2
I_FSM ≤ 65 A
t_rr ≤ 145 ns
GENERAL DESCRIPTION
Glass-passivated double diffused rectifier diodes featuring low forward voltage drop, fast reverse recovery and soft
recovery characteristic. The devices are intended for use in TV receivers, monitors and switched mode power supplies.
The BY329F series is supplied in the conventional leaded SOD100 package.
The BY329X series is supplied in the conventional leaded SOD113 package.
PINNING
SOD100
SOD113
PIN
DESCRIPTION
case
1 cathode
case
2 anode
tab isolated
12
12
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
V_RSM
V_RRM
V_RWM
Peak non-repetitive reverse
voltage
Peak repetitive reverse voltage
Crest working reverse voltage
BY329F / BY329X
-
-
-
I_F(AV)
I_F(RMS)
I_FRM
I_FSM
I²t
T_stg
T_j
Average forward current¹
square wave; δ = 0.5;
-
T_hs ≤ 83 ˚C
sinusoidal; a = 1.57;
-
T_hs ≤ 90 ˚C
RMS forward current
-
Peak repetitive forward current t = 25 µs; δ = 0.5;
-
T_hs ≤ 83 ˚C
Peak non-repetitive forward t = 10 ms
-
current.
t = 8.3 ms
-
sinusoidal; T_j = 150 ˚C prior
to surge; with reapplied
I²t for fusing
V_RWM(max)
t = 10 ms
-
Storage temperature
-40
Operating junction temperature
-
1. Neglecting switching and reverse current losses.
MAX.
UNIT
-800 -1000 -1200
800 1000 1200 V
800 1000 1200 V
600 800 1000 V
8
A
7
A
11
A
16
A
65
A
71
A
28
A²s
150
˚C
150
˚C
September 1998
1
Rev 1.100