BUX87 Datasheet, PDF (1/6 Pages) STMicroelectronics – HIGH VOLTAGE NPN SILICON POWER TRANSISTOR

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUX87-1100
GENERAL DESCRIPTION
High voltage, high speed,low capacitance npn power transistor in a SOT78 envelope intended for use in the
dynamic focus circuit of televisions and monitors.
QUICK REFERENCE DATA
SYMBOL
V_CESM
V_CEO
I_C
I_CM
P_tot
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
CONDITIONS
V_BE = 0 V
T_mb ≤ 25 ˚C
TYP.
-
-
-
-
-
MAX.
1100
700
0.5
1
46
UNIT
V
V
A
A
W
PINNING - TO220AB
PIN
DESCRIPTION
1 emitter
2 collector
3 base
tab collector
PIN CONFIGURATION
tab
1 23
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
V_CESM
V_CEO
I_C
I_CM
I_B
I_BM
-I_BM
P_tot
T_stg
T_j
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current (peak value) t_p = 2 ms
Base current (DC)
Base current (peak value)
Reverse base current (peak value)¹
Total power dissipation
Storage temperature
Junction temperature
V_BE = 0 V
T_mb ≤ 25 ˚C
MIN.
-
-
-
-
-
-
-
-
-40
-
MAX.
1100
700
0.5
1
0.2
0.3
0.3
46
150
150
UNIT
V
V
A
A
A
A
A
W
˚C
˚C
THERMAL RESISTANCES
SYMBOL
R_{th j-mb}
R_{th j-a}
PARAMETER
Junction to mounting base
Junction to ambient
CONDITIONS
in free air
TYP.
-
60
MAX.
2.7
-
UNIT
K/W
K/W
1 Turn-off current.
November 1999
1
Rev 1.000