BUX86P Datasheet, PDF (1/6 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUX86P
BUX87P
GENERAL DESCRIPTION
High voltage, high speed glass passivated npn power transistors in a SOT82 envelope intended for use in
converters, inverters, switching regulators, motor control systems and switching applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
V_CESM
V_CEO
V_CESAT
I_C
I_CM
P_tot
t_f
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector-emitter saturation voltage
Collector current (DC)
Collector current peak value
Total power dissipation
Fall time
CONDITIONS
V_BE = 0 V
I_C = 0.2 A; I_B = 20 mA
T_mb ≤ 25 ˚C
I_C = 0.2 A; I_B(on) = 20 mA
TYP.
BUX
-
-
-
-
-
-
0.28
MAX.
86P 87P
800 1000
400 450
1
0.5
1
42
-
UNIT
V
V
V
A
A
W
µs
PINNING - SOT82
PIN
DESCRIPTION
1 emitter
2 collector
3 base
PIN CONFIGURATION
SYMBOL
c
b
1 23
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
BUX
V_CESM
Collector-emitter voltage peak value
V_BE = 0 V
-
V_CEO
Collector-emitter voltage (open base)
-
V_EBO
Emitter-base voltage (open collector)
-
I_C
Collector current (DC)
-
I_CM
Collector current (peak value) t_p = 2 ms
-
I_B
Base current (DC)
-
I_BM
-I_BM
Base current (peak value)
Reverse base current (peak value)¹
-
-
P_tot
Total power dissipation
T_mb ≤ 25 ˚C
-
T_stg
Storage temperature
-40
T_j
Junction temperature
-
MAX.
86P 87P
800 1000
400 450
5
0.5
1
0.2
0.3
0.3
42
150
150
UNIT
V
V
V
A
A
A
A
A
W
˚C
˚C
1 Turn-off current.
November 1995
1
Rev 1.100