BUX84S Datasheet, PDF (1/4 Pages) NXP Semiconductors – NPN high voltage Power transistor

Philips Semiconductors
NPN high voltage
Power transistor
Product specification
BUX84S
FEATURES
SYMBOL
• Fast switching
• Excellent thermal stability
• High thermal cycling performance
• Low thermal resistance
• Surface mounting package
c
b
e
GENERAL DESCRIPTION
High voltage, high speed glass
passivated NPN power transistor in
a plastic package.
Applications:-
Off-line SMPS
TV and monitor power supplies
Inverters
Electronic lighting ballasts
The BUX84S is supplied in the
SOT428 (DPAK) surface mounting
package.
PINNING
PIN
DESCRIPTION
1 base
2 collector¹
3 emitter
4 collector (tab)
QUICK REFERENCE DATA
V_CESM = 800 V
V_CEO = 400 V
I_C = 2 A
V_CE(SAT) ≤ 1 V (I_C = 1 A)
t_f = 0.4 µs (typ)
SOT428
tab
2
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
V_CESM
V_CEO
V_EBO
I_C
I_CM
I_B
I_BM
-I_BM
P_tot
T_j, T_stg
Collector-emitter voltage
(peak value)
Collector-emitter voltage
(DC)
Emitter-base voltage
Collector current (DC)
Collector current (peak
value)
Base current (DC)
Base current (peak value)
Reverse base current (peak
value during turn-off)
Total power dissipation
Operating junction and
storage temperature
V_BE = 0 V
base open circuit
collector open circuit
t_p = 2 ms
T_mb = 25 ˚C
MIN.
-
-
-
-
-
-
-
-
-
- 65
MAX.
800
400
5
2
3
0.75
1
1
50
150
UNIT
V
V
V
A
A
A
A
A
W
˚C
1 It is not possible to make connection to pin:2 of the SOT428 package.
February 1999
1
Rev 1.000