BUW14 Datasheet, PDF (1/6 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUW14
GENERAL DESCRIPTION
High-voltage, high-speed, glass passivated npn power transistor in a SOT82 envelope intended for use in
converters, inverters, switching regulators, motor control systems and switching applications.
QUICK REFERENCE DATA
SYMBOL
V_CESM
V_CEO
I_C
I_CM
P_tot
t_f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Fall time
CONDITIONS
V_BE = 0 V
T_mb ≤ 60 ˚C
TYP.
-
-
-
-
-
0.4
MAX.
1000
450
0.5
1
20
-
UNIT
V
V
A
A
W
µs
PINNING - SOT82
PIN
DESCRIPTION
1 emitter
2 collector
3 base
PIN CONFIGURATION
SYMBOL
c
b
1 23
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
V_CESM
V_CEO
I_C
I_CM
I_B
I_BM
-I_BM
P_tot
T_stg
T_j
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value ¹
Total power dissipation
Storage temperature
Junction temperature
V_BE = 0 V
T_mb ≤ 60 ˚C
THERMAL RESISTANCES
SYMBOL
R_{th j-mb}
R_{th j-a}
PARAMETER
Junction to mounting base
Junction to ambient
CONDITIONS
-
in free air
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
1000
450
0.5
1
0.2
0.3
0.3
20
150
150
UNIT
V
V
A
A
A
A
A
W
˚C
˚C
TYP.
-
100
MAX.
4.5
-
UNIT
K/W
K/W
1 Turn-off current.
March 1992
1
Rev 1.000