BUT211 Datasheet, PDF (1/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUT211
GENERAL DESCRIPTION
Enhanced performance, new generation, high speed switching npn transistor in TO220AB envelope specially suited
for high frequency electronic lighting ballast applications.
QUICK REFERENCE DATA
SYMBOL
V_CESM
V_CEO
I_C
I_CM
P_tot
V_CEsat
t_f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Inductive fall time
CONDITIONS
V_BE = 0 V
T_mb ≤ 25 ˚C
I_C = 3.0 A; I_B = 0.4 A
I_Con = 3.0 A; I_Bon = 0.3 A
TYP.
-
-
-
-
-
-
-
MAX.
850
400
5
10
100
2.0
0.1
UNIT
V
V
A
A
W
V
µs
PINNING - TO220AB
PIN
DESCRIPTION
1 base
2 collector
3 emitter
tab collector
PIN CONFIGURATION
tab
1 23
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
V_CESM
V_CEO
I_C
I_CM
I_B
I_BM
P_tot
T_stg
T_j
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
V_BE = 0 V
T_mb ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL
R_{th j-mb}
R_{th j-a}
PARAMETER
Junction to mounting base
Junction to ambient
CONDITIONS
in free air
MIN.
-
-
-
-
-
-
-
-65
-
MAX.
850
400
5
10
2
4
100
150
150
UNIT
V
V
A
A
A
A
W
˚C
˚C
TYP.
-
-
MAX.
1.25
60
UNIT
K/W
K/W
March 1996
1
Rev 1.100