BUT11APX-1200 Datasheet, PDF (1/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUT11APX-1200
GENERAL DESCRIPTION
Enhanced performance new generation,high voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
V_CESM
V_CBO
V_CEO
I_C
I_CM
P_tot
V_CEsat
h_FEsat
t_f
PARAMETER
Collector-emitter voltage peak value
Collector-Base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
DC current gain
Fall time
CONDITIONS
V_BE = 0 V
T_hs ≤ 25 ˚C
I_C = 2 A; I_B = 0.4 A
I_C = 3 A; V_CE = 5 V
I_C = 2.5 A; I_B1 = 0.5 A
TYP.
-
-
-
-
-
-
0.15
15.5
170
MAX.
1200
1200
550
6
10
32
1.0
-
300
UNIT
V
V
V
A
A
W
V
ns
PINNING - SOT186A
PIN
DESCRIPTION
1 base
2 collector
3 emitter
case isolated
PIN CONFIGURATION
case
12 3
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
V_CESM
V_CEO
V_CBO
I_C
I_CM
I_B
I_BM
P_tot
T_stg
T_j
Collector to emitter voltage
Collector to emitter voltage (open base)
Collector to base voltage (open emitter)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
V_BE = 0 V
T_hs ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL
R_{th j-hs}
R_{th j-a}
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
1200
550
1200
6
10
3
5
32
150
150
UNIT
V
V
V
A
A
A
A
W
˚C
˚C
TYP.
-
55
MAX.
3.95
-
UNIT
K/W
K/W
April 1999
1
Rev 1.000