BUK9Y53-100B_15 Datasheet, PDF(1/12 Page) NXP Semiconductors

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

BUK9Y53-100B_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

BUK9Y53-100B

N-channel TrenchMOS logic level FET

Rev. 01 â 30 August 2007

Product data sheet

1. Product proï¬le

1.1 General description

N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package

using NXP High-Performance Automotive (HPA) TrenchMOS technology.

1.2 Features

I Very low on-state resistance

I 175 Â°C rated

I Q101 compliant

I Logic level compatible

1.3 Applications

I Automotive systems

I Motors, lamps and solenoids

I General purpose power switching

I 12 V, 24 V and 42 V loads

1.4 Quick reference data

I EDS(AL)S â¤ 85 mJ

I ID â¤ 23 A

I RDSon = 45 mâ¦ (typ)

I Ptot â¤ 75 W

2. Pinning information

Table 1. Pinning

Pin Description

1, 2, 3 source (S)

gate (G)

mb mounting base; connected to drain (D)

Simpliï¬ed outline

Symbol

1234

SOT669 (LFPAK)

mbl798 S1 S2 S3

▷