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BUK9Y30-75B_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET | |||
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BUK9Y30-75B
N-channel TrenchMOS logic level FET
Rev. 04 â 10 April 2008
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
 Low conduction losses due to low
on-state resistance
 Suitable for logic level gate drive
sources
 Q101 compliant
 Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
 12 V, 24 V and 42 V loads
 General purpose power switching
 Automotive systems
 Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
VDS
ID
Quick reference
Parameter
drain-source voltage
drain current
Ptot
total power dissipation
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy
Dynamic characteristics
QGD
gate-drain charge
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj ⥠25 °C; Tj ⤠175 °C
VGS = 5 V; Tmb = 25 °C;
see Figure 1 and 4
Tmb = 25 °C; see Figure 2
ID = 34 A; Vsup ⤠75 V;
RGS = 50 Ω; VGS = 5 V;
Tj(init) = 25 °C; unclamped
VGS = 5 V; ID = 25 A;
VDS = 60 V; Tj = 25 °C;
see Figure 14
VGS = 5 V; ID = 15 A;
Tj = 25 °C; see Figure 12 and
13
Min Typ Max Unit
-
-
75 V
-
-
34 A
-
-
85 W
-
-
78 mJ
-
9-
nC
-
25 30 mΩ
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