BUK9Y19-55B Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel TrenchMOS™ logic level FET

BUK9Y19-55B
N-channel TrenchMOS™ logic level FET
M3D748
Rev. 01 — 28 May 2004
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips High-Performance Automotive (HPA) TrenchMOS™ technology.
1.2 Features
s Very low on-state resistance
s 175 °C rated
s Q101 compliant
s Logic level compatible.
1.3 Applications
s Automotive systems
s Motors, lamps and solenoids
s 12 V and 24 V loads
s General purpose power switching.
1.4 Quick reference data
s E_DS(AL)S ≤ 91 mJ
s I_D ≤ 40 A
s R_DSon = 16.3 mΩ (typ)
s P_tot ≤ 75 W.
2. Pinning information
Table 1: Pinning - SOT669 (LFPAK) simplified outline and symbol
Pin
Description
Simplified outline
1,2,3 source (s)
mb
4
gate (g)
mb
mounting base,
connected to
drain (d)
Symbol
d
g
1234
Top view MBL286
SOT669 (LFPAK)
MBL798
s1 s2 s3