|
BUK9Y14-40B_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET | |||
|
BUK9Y14-40B
N-channel TrenchMOS logic level FET
Rev. 03 â 2 June 2008
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP High Performance Automotive (HPA) TrenchMOS technology. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features and benefits
 Low conduction losses due to low
on-state resistance
 Suitable for logic level gate drive
sources
 Q101 compliant
 Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
 Air bag
 Automotive transmission control
 Fuel pump and injection
 Automotive ABS systems
 Diesel injection systems
 Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
VDS
drain-source voltage
ID
drain current
Ptot
total power dissipation
Dynamic characteristics
QGD
gate-drain charge
Static characteristics
RDSon
drain-source on-state
resistance
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy
Conditions
Tj ⥠25 °C; Tj ⤠175 °C
VGS = 5 V; Tmb = 25 °C;
see Figure 4 and 1
Tmb = 25 °C; see Figure 2
VGS = 5 V; ID = 10 A;
VDS = 32 V; see Figure 14
VGS = 5 V; ID = 20 A;
Tj = 25 °C; see Figure 12 and
13
ID = 56 A; Vsup ⤠40 V;
RGS = 50 Ω; VGS = 5 V;
Tj(init) = 25 °C; unclamped
Min Typ Max Unit
-
-
40 V
-
-
56 A
-
-
85 W
-
9-
nC
-
12 14 mΩ
-
-
89 mJ
|
▷ |