BUK9Y07-30B_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

BUK9Y07-30B
N-channel TrenchMOS logic level FET
Rev. 03 — 7 April 2010
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
 Low conduction losses due to low
on-state resistance
 Q101 compliant
 Suitable for logic level gate drive
sources
 Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
 12 V loads
 Automotive systems
 General purpose power switching
 Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
V_DS
drain-source
T_j ≥ 25 °C; T_j ≤ 175 °C
voltage
I_D
drain current
V_GS = 5 V; T_mb = 25 °C;
see Figure 1; see Figure 4
P_tot
total power
T_mb = 25 °C; see Figure 2
dissipation
Static characteristics
R_DSon
drain-source
on-state
resistance
V_GS = 5 V; I_D = 25 A;
T_j = 25 °C; see Figure 12;
see Figure 13
Avalanche ruggedness
V_GS = 10 V; I_D = 25 A;
T_j = 25 °C
Min Typ Max Unit
-
-
30 V
[1]
-
-
75 A
-
-
105 W
-
4.9 7
mΩ
-
46
mΩ