BUK9K32-100E_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – Dual N-channel 100 V, 33 m logic level MOSFET

BUK9K32-100E
Dual N-channel 100 V, 33 mΩ logic level MOSFET
10 December 2013
Product data sheet
1. General description
Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using
TrenchMOS technology. This product has been designed and qualified to AEC Q101
standard for use in high performance automotive applications.
2. Features and benefits
• Dual MOSFET
• Q101 Compliant
• Repetitive avalanche rated
• Suitable for thermally demanding environments due to 175 °C rating
• True logic level gate with V_GS(th) rating of greater than 0.5 V at 175 °C
3. Applications
• 12 V, 24 V and 48 V Automotive systems
• Motors, lamps and solenoid control
• Transmission control
• Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
V_GS = 5 V; T_mb = 25 °C; Fig. 1
P_tot
total power dissipation T_mb = 25 °C; Fig. 2
Static characteristics FET1 and FET2
R_DSon
drain-source on-state V_GS = 5 V; I_D = 5 A; T_j = 25 °C; Fig. 11
resistance
Dynamic characteristics FET1 and FET2
Q_GD
gate-drain charge
I_D = 5 A; V_DS = 80 V; V_GS = 5 V;
T_j = 25 °C; Fig. 13; Fig. 14
Min Typ Max Unit
-
-
100 V
-
-
26
A
-
-
64
W
-
26.6 33
mΩ
-
11
-
nC
Scan or click this QR code to view the latest information for this product