BUK9K17-60E_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – Dual N-channel 60 V, 17 m logic level MOSFET

BUK9K17-60E
Dual N-channel 60 V, 17 mΩ logic level MOSFET
19 March 2014
Product data sheet
1. General description
Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using
TrenchMOS technology. This product has been designed and qualified to AEC Q101
standard for use in high performance automotive applications.
2. Features and benefits
• Dual MOSFET
• Q101 Compliant
• Repetitive avalanche rated
• Suitable for thermally demanding environments due to 175 °C rating
• True logic level gate with V_GS(th) rating of greater than 0.5 V at 175 °C
3. Applications
• 12 V Automotive systems
• Motors, lamps and solenoid control
• Transmission control
• Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
V_GS = 5 V; T_mb = 25 °C; Fig. 2
[1]
P_tot
total power dissipation T_mb = 25 °C; Fig. 1
Static characteristics FET1 and FET2
R_DSon
drain-source on-state V_GS = 5 V; I_D = 10 A; T_j = 25 °C; Fig. 11
resistance
Dynamic characteristics FET1 and FET2
Q_GD
gate-drain charge
I_D = 10 A; V_DS = 48 V; V_GS = 5 V;
T_j = 25 °C; Fig. 13; Fig. 14
[1] Continuous current is limited by package.
Min Typ Max Unit
-
-
60
V
-
-
26
A
-
-
53
W
-
14
17
mΩ
-
5.7 -
nC
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