BUK9E06-55A_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

BUK9E06-55A
N-channel TrenchMOS logic level FET
Rev. 04 — 31 May 2010
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
„ Low conduction losses due to low
on-state resistance
„ Q101 compliant
„ Suitable for logic level gate drive
sources
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V and 24 V loads
„ Automotive and general purpose
power switching
„ Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
V_DS
drain-source
T_j ≥ 25 °C; T_j ≤ 175 °C
voltage
I_D
drain current
V_GS = 5 V; T_j = 25 °C;
[1]
see Figure 3; see Figure 1
P_tot
total power
T_mb = 25 °C; see Figure 2
dissipation
Static characteristics
R_DSon
drain-source
on-state
resistance
V_GS = 10 V; I_D = 25 A;
T_j = 25 °C
V_GS = 4.5 V; I_D = 25 A;
T_j = 25 °C
V_GS = 5 V; I_D = 25 A;
T_j = 25 °C;
see Figure 12; see Figure 13
Avalanche ruggedness
E_DS(AL)S
non-repetitive
I_D = 75 A; V_sup ≤ 55 V;
drain-source
R_GS = 50 Ω; V_GS = 5 V;
avalanche energy T_j(init) = 25 °C; unclamped
Min Typ Max Unit
-
-
55 V
-
-
75 A
-
-
300 W
-
4.8 5.8 mΩ
-
-
6.7 mΩ
-
5.3 6.3 mΩ
-
-
1.1 J