BUK9C10-65BIT_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – N-channel TrenchPLUS logic level FET

BUK9C10-65BIT
N-channel TrenchPLUS logic level FET
Rev. 02 — 21 June 2010
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode field-effect power transistor in SOT427. Device is
manufactured using NXP High-Performance TrenchPLUS technology, featuring very low
on-state resistance, integrated current sensing transistors and over temperature
protection diodes.
1.2 Features and benefits
 AEC-Q101 compliant
 Low conduction losses due to low
on-state resistance
1.3 Applications
 Lamp switching
 Motor drive systems
 Power distribution
 Solenoid drivers
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Static characteristics
R_DSon
drain-source
on-state
resistance
V_GS = 5 V; I_D = 25 A;
T_j = 25 °C; see Figure 13;
see Figure 12
I_D/I_sense
ratio of drain
current to sense
current
T_j = 25 °C; V_GS = 5 V;
see Figure 14
V_(BR)DSS
drain-source
breakdown
voltage
I_D = 250 µA; V_GS = 0 V;
T_j = 25 °C
Min Typ Max Unit
-
8.5 10 mΩ
8094 8993 9892 A/A
65 -
-
V