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BUK9C10-55BIT_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel TrenchPLUS logic level FET
BUK9C10-55BIT
N-channel TrenchPLUS logic level FET
25 August 2014
Product data sheet
1. General description
Logic level N-channel MOSFET in a D2PAK-7 package using TrenchPLUS MOSFET
technology. The device includes TrenchPLUS current sensing and integrated diodes
for temperature sensing. This product has been designed and qualified to AEC Q101
standard for use in high performance automotive applications.
2. Features and benefits
• AEC-Q101 Compliant
• Enables temperature monitoring due to integrated temperature sensor
• Enables current sense measurement due to integrated current senseFET
• Suitable for thermally demanding environments due to 175 °C rating
3. Applications
• 12 V Automotive systems
• Motors, lamps and solenoid control
• Powertrain, chassis and body applications
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Static characteristics
RDSon
drain-source on-state VGS = 5 V; ID = 10 A; Tj = 25 °C;
resistance
Fig. 16; Fig. 17
VGS = 10 V; ID = 10 A; Tj = 25 °C;
Fig. 16; Fig. 17
ID/Isense
ratio of drain current to -55 °C < Tj < 175 °C; VGS = 5 V; Fig. 18
sense current
SF(TSD)
temperature sense
diode temperature
coefficient
IF = 250 µA; -55 °C ≤ Tj ≤ 175 °C;
Fig. 19
V(BR)DSS
drain-source
breakdown voltage
ID = 25 mA; VGS = 0 V; Tj = 25 °C
VF(TSD)
temperature sense
IF = 250 µA; Tj = 25 °C; Fig. 19
diode forward voltage
Min Typ Max Unit
-
8.2 10
mΩ
-
7.5 9
mΩ
10000 11000 12000 A/A
-5.7 -6
-6.3 mV/K
55
-
-
V
2.855 2.9 2.945 V
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