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BUK9C07-65BIT_15 Datasheet, PDF (1/16 Pages) NXP Semiconductors – N-channel TrenchPLUS logic level FET | |||
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BUK9C07-65BIT
N-channel TrenchPLUS logic level FET
Rev. 03 â 15 July 2010
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode field-effect power transistor in SOT427. Device is
manufactured using NXP High-Performance TrenchPLUS technology, featuring very low
on-state resistance, integrated current sensing transistor and over temperature protection
diodes.
1.2 Features and benefits
ï® AEC-Q101 compliant
ï® Low conduction losses due to low
on-state resistance
1.3 Applications
ï® Lamp switching
ï® Motor drive systems
ï® Power distribution
ï® Solenoid drivers
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 5 V; ID = 25 A;
Tj = 25 °C; see Figure 12;
see Figure 13
ID/Isense
ratio of drain
current to sense
current
Tj = 25 °C; VGS = 5 V;
see Figure 14
V(BR)DSS
drain-source
breakdown
voltage
ID = 250 µA; VGS = 0 V;
Tj = 25 °C
Min Typ Max Unit
-
67
mâ¦
1086 1206 1327 A/A
185
65 -
-
V
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