BUK9907-40ATC_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – N-channel TrenchPLUS logic level FET

BUK9907-40ATC
N-channel TrenchPLUS logic level FET
Rev. 02 — 16 February 2009
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS diodes for
clamping, ElectroStatic Discharge (ESD) protection and temperature sensing. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features and benefits
„ Allows responsive temperature
monitoring due to integrated
temperature sensor
„ Low conduction losses due to low
on-state resistance
„ Q101 compliant
1.3 Applications
„ 12 V and 24 V high power motor
drives
„ Automotive and general purpose
power switching
„ Electrical Power Assisted Steering
(EPAS)
„ Protected drive for lamps
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
I_D
drain current
V_GS = 5 V; T_mb = 25 °C; see Figure 3; see Figure 2 [1] -
-
P_tot
total power dissipation T_mb = 25 °C; see Figure 1
-
-
T_j
junction temperature
-55 -
Static characteristics
140 A
272 W
175 °C
R_DSon drain-source on-state V_GS = 5 V; I_D = 50 A; T_j = 25 °C; see Figure 7;
resistance
see Figure 8
-
5.8 7
mΩ
S_F(TSD)
temperature sense
diode temperature
coefficient
V_GS = 4.5 V; I_D = 50 A; T_j = 25 °C
V_GS = 10 V; I_D = 50 A; T_j = 25 °C
I_F = 250 µA; T_j > -55 °C; T_j < 175 °C
-
6
7.7 mΩ
-
5.2 6.2 mΩ
1.4 1.54 1.68 mV/K
V_F(TSD) temperature sense
diode forward voltage
648 658 668 mV
[1] Current is limited by power dissipation chip rating.