|
BUK9880-55A_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET | |||
|
BUK9880-55A
N-channel TrenchMOS logic level FET
19 March 2014
Product data sheet
1. General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
2. Features and benefits
⢠Low conduction losses due to low on-state resistance
⢠Q101 compliant
⢠Suitable for logic level gate drive sources
3. Applications
⢠12 V and 24 V loads
⢠Automotive and general purpose power switching
⢠Motors, lamps and solenoids
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS
drain-source voltage Tj ⥠25 °C; Tj ⤠150 °C
ID
drain current
VGS = 5 V; Tsp = 25 °C; Fig. 3; Fig. 2
Ptot
total power dissipation Tsp = 25 °C; Fig. 1
Static characteristics
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 8 A; Tj = 25 °C
VGS = 4.5 V; ID = 8 A; Tj = 25 °C
VGS = 5 V; ID = 8 A; Tj = 25 °C; Fig. 13;
Fig. 14
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-
source avalanche
energy
ID = 6 A; Vsup ⤠55 V; RGS = 50 Ω;
VGS = 5 V; Tj(init) = 25 °C; unclamped
Min Typ Max Unit
-
-
55
V
-
-
7
A
-
-
8
W
-
62
73
mΩ
-
-
89
mΩ
-
68
80
mΩ
-
-
36
mJ
Scan or click this QR code to view the latest information for this product
|
▷ |