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BUK9832-55A_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET | |||
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BUK9832-55A
N-channel TrenchMOS logic level FET
Rev. 02 â 1 June 2010
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
 Low conduction losses due to low
on-state resistance
 Q101 compliant
 Suitable for logic level gate drive
sources
1.3 Applications
 12 V and 24 V loads
 Automotive and general purpose
power switching
 Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj ⥠25 °C; Tj ⤠150 °C
voltage
ID
drain current
VGS = 5 V; Tsp = 25 °C;
see Figure 1; see Figure 3
Ptot
total power
Tsp = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 4.5 V; ID = 8 A;
Tj = 25 °C
VGS = 10 V; ID = 8 A; Tj = 25 °C
VGS = 5 V; ID = 8 A; Tj = 25 °C;
see Figure 12; see Figure 13
Avalanche ruggedness
EDS(AL)S
non-repetitive
ID = 10 A; Vsup ⤠55 V;
drain-source
RGS = 50 â¦; VGS = 5 V;
avalanche energy Tj(init) = 25 °C; unclamped
Min Typ Max Unit
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-
55 V
-
-
12 A
-
-
8
W
-
-
36 mâ¦
-
25 29 mâ¦
-
27 32 mâ¦
-
-
100 mJ
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