BUK98180-100A_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

BUK98180-100A
N-channel TrenchMOS logic level FET
Rev. 03 — 3 June 2010
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
 Low conduction losses due to low
on-state resistance
 Q101 compliant
 Suitable for logic level gate drive
sources
1.3 Applications
 12 V, 24 V and 42 V loads
 Automotive and general purpose
power switching
 Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
V_DS
drain-source
T_j ≥ 25 °C; T_j ≤ 150 °C
voltage
I_D
drain current
V_GS = 5 V; T_sp = 25 °C;
see Figure 1; see Figure 3
P_tot
total power
T_sp = 25 °C; see Figure 2
dissipation
Static characteristics
R_DSon
drain-source
on-state
resistance
V_GS = 10 V; I_D = 5 A; T_j = 25 °C
V_GS = 4.5 V; I_D = 5 A;
T_j = 25 °C
V_GS = 5 V; I_D = 5 A; T_j = 25 °C;
see Figure 12; see Figure 13
Avalanche ruggedness
E_DS(AL)S
non-repetitive
I_D = 4 A; V_sup ≤ 100 V;
drain-source
R_GS = 50 Ω; V_GS = 5 V;
avalanche energy T_j(init) = 25 °C; unclamped
Min Typ Max Unit
-
-
100 V
-
-
4.6 A
-
-
8
W
-
147 173 mΩ
-
-
201 mΩ
-
153 180 mΩ
-
-
16 mJ