BUK98150-55A Datasheet, PDF (1/12 Pages) NXP Semiconductors – TrenchMOS logic level FET

BUK98150-55A
TrenchMOS™ logic level FET
M3D087
Rev. 02 — 25 March 2002
Product data
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™¹ technology, featuring very low on-state resistance.
Product availability:
BUK98150-55A in SOT223 (SC-73).
2. Features
s TrenchMOS™ technology
s Q101 compliant
s 150 °C rated
s Logic level compatible.
3. Applications
s Automotive and general purpose power switching:
x 12 V and 24 V loads
x Motors, lamps and solenoids.
4. Pinning information
Table 1: Pinning - SOT223 (SC-73), simplified outline and symbol
Pin
Description
Simplified outline
1
gate (g)
4
2
drain (d)
3
source (s)
4
drain (d)
1
Top view
2
3
MSB002 - 1
SOT223 (SC-73)
Symbol
d
g
MBB076
s
1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.