BUK9675-100A_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

BUK9675-100A
N-channel TrenchMOS logic level FET
18 August 2015
Product data sheet
1. General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
2. Features and benefits
• AEC Q101 compliant
• Low conduction losses due to low on-state resistance
3. Applications
• Automotive and general purpose power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
-
-
100 V
I_D
drain current
V_GS = 5 V; T_mb = 25 °C; Fig. 2
-
-
23
A
P_tot
total power dissipation T_mb = 25 °C; Fig. 1
-
-
98
W
Static characteristics
R_DSon
drain-source on-state V_GS = 10 V; I_D = 10 A; T_j = 25 °C;
resistance
Fig. 12
-
55
72
mΩ
V_GS = 5 V; I_D = 10 A; T_j = 25 °C; Fig. 12
-
60
75
mΩ
Avalanche ruggedness
E_DS(AL)S
non-repetitive drain- I_D = 23 A; V_sup ≤ 100 V; R_GS = 50 Ω; [1][2] -
-
100 mJ
source avalanche
V_GS = 5 V; T_j(init) = 25 °C; unclamped;
energy
Fig. 4
[1] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[2] Refer to application note AN10273 for further information.
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