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BUK9628-55A_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET | |||
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BUK9628-55A
N-channel TrenchMOS logic level FET
Rev. 02 â 17 February 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
 AEC Q101 compliant
 Low conduction losses due to low
on-state resistance
 Suitable for logic level gate drive
sources
 Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
 12 V and 24 V loads
 Automotive and general purpose
power switching
 Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source voltage Tj ⥠25 °C; Tj ⤠175 °C
ID
drain current
VGS = 5 V; Tmb = 25 °C;
see Figure 1; see Figure 3
Ptot
total power
dissipation
Tmb = 25 °C; see Figure 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 15 A; Tj = 25 °C
resistance
VGS = 4.5 V; ID = 15 A; Tj = 25 °C
VGS = 5 V; ID = 15 A; Tj = 25 °C;
see Figure 12; see Figure 13
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
ID = 34 A; Vsup ⤠55 V;
RGS = 50 â¦; VGS = 5 V;
Tj(init) = 25 °C; unclamped
Min Typ Max Unit
-
-
55 V
-
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42 A
-
-
99 W
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22 25 mâ¦
-
-
30 mâ¦
-
24 28 mâ¦
-
-
57.8 mJ
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