BUK96180-100A_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

BUK96180-100A
N-channel TrenchMOS logic level FET
Rev. 02 — 26 April 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
„ AEC Q101 compliant
„ Low conduction losses due to low
on-state resistance
1.3 Applications
„ Automotive and general purpose
power switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
T_mb = 25 °C
P_tot
total power
dissipation
Static characteristics
R_DSon
drain-source on-state
resistance
Avalanche ruggedness
V_GS = 10 V; I_D = 5 A; T_j = 25 °C
V_GS = 5 V; I_D = 5 A; T_j = 25 °C
E_DS(AL)S
non-repetitive
drain-source
avalanche energy
I_D = 5.5 A; V_sup ≤ 25 V;
R_GS = 50 Ω; V_GS = 5 V;
T_j(init) = 25 °C; unclamped
Min Typ Max Unit
-
-
100 V
-
-
11 A
-
-
54 W
-
152 173 mΩ
-
165 180 mΩ
-
-
1.5 mJ