BUK9610-100B_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

BUK9610-100B
N-channel TrenchMOS logic level FET
Rev. 03 — 31 January 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
„ AEC Q101 compliant
„ Low conduction losses due to low
on-state resistance
„ Suitable for logic level gate drive
sources
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V, 24 V and 42 V loads
„ Automotive systems
„ General purpose power switching
„ Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
V_DS
drain-source
T_j ≥ 25 °C; T_j ≤ 175 °C
voltage
-
-
100 V
I_D
drain current
V_GS = 5 V; T_mb = 25 °C;
[1] _-
-
75 A
see Figure 1; see Figure 3
P_tot
total power
dissipation
T_mb = 25 °C; see Figure 2
-
-
300 W
Static characteristics
R_DSon
drain-source
V_GS = 10 V; I_D = 25 A; T_j = 25 °C -
on-state resistance _{VGS = 5 V; ID = 25 A; Tj = 25 °C;}
-
see Figure 11; see Figure 12
8.3 9.7 mΩ
8.6 10 mΩ