BUK9609-75A_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

BUK9609-75A
N-channel TrenchMOS logic level FET
Rev. 4 — 30 August 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
 Low conduction losses due to low
on-state resistance
 Q101 compliant
 Suitable for logic level gate drive
sources
 Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
 12 V, 24 V and 42 V loads
 Automotive and general purpose
power switching
 Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
V_DS
drain-source
voltage
T_j ≥ 25 °C; T_j ≤ 175 °C
-
-
75 V
I_D
drain current
V_GS = 5 V; T_mb = 25 °C;
[1] _-
-
75 A
see Figure 3; see Figure 1
P_tot
total power
dissipation
T_mb = 25 °C; see Figure 2
-
-
230 W
Static characteristics
R_DSon
drain-source
V_GS = 4.5 V; I_D = 25 A; T_j = 25 °C
-
-
9.95 mΩ
on-state resistance _{VGS = 10 V; ID = 25 A; Tj = 25 °C}
-
7.23 8.5 mΩ
V_GS = 5 V; I_D = 25 A; T_j = 25 °C;
see Figure 13; see Figure 14
-
7.6 9
mΩ
Avalanche ruggedness
E_DS(AL)S
non-repetitive
drain-source
avalanche energy
I_D = 75 A; V_sup ≤ 75 V;
R_GS = 50 Ω; V_GS = 5 V;
T_j(init) = 25 °C; unclamped
-
-
562 mJ
[1] Continuous current is limited by package.