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BUK9535-55A_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET | |||
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BUK9535-55A
N-channel TrenchMOS logic level FET
Rev. 02 â 28 April 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
 Low conduction losses due to low
on-state resistance
1.3 Applications
 Automotive and general purpose
power switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source voltage
ID
drain current
Ptot
total power dissipation
Static characteristics
Tj ⥠25 °C; Tj ⤠175 °C
Tmb = 25 °C
RDSon
drain-source on-state
resistance
Avalanche ruggedness
VGS = 10 V; ID = 25 A; Tj = 25 °C
VGS = 5 V; ID = 25 A; Tj = 25 °C
EDS(AL)S
non-repetitive
drain-source
avalanche energy
ID = 14 A; Vsup ⤠25 V;
RGS = 50 â¦; VGS = 5 V;
Tj(init) = 25 °C; unclamped
Min Typ Max Unit
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55 V
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34 A
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85 W
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24 32 mâ¦
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26 35 mâ¦
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-
49 mJ
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