BUK9535-100A_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

BUK9535-100A
N-channel TrenchMOS logic level FET
Rev. 2 — 9 February 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
„ AEC Q101 compliant
„ Low conduction losses due to low
on-state resistance
„ Suitable for logic level gate drive
sources
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V, 24 V and 42 V loads
„ Automotive and general purpose
power switching
„ Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V_DS
I_D
P_tot
Quick reference data
Parameter
Conditions
drain-source
voltage
T_j ≥ 25 °C; T_j ≤ 175 °C
drain current
V_GS = 5 V; T_mb = 25 °C;
see Figure 1; see Figure 3
total power
dissipation
T_mb = 25 °C; see Figure 2
Min Typ Max Unit
-
-
100 V
-
-
41 A
-
-
149 W