BUK9507-30B Datasheet, PDF (1/15 Pages) NXP Semiconductors – TrenchMOS logic level FET

BUK95/9607-30B
TrenchMOS™ logic level FET
Rev. 01 — 25 April 2003
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips High-Performance Automotive (HPA) TrenchMOS™ technology.
Product availability:
BUK9507-30B in SOT78 (TO-220AB)
BUK9607-30B in SOT404 (D²-PAK).
1.2 Features
s Low on-state resistance
s 175 °C rated
s Q101 compliant
s Logic level compatible.
1.3 Applications
s Automotive systems
s Motors, lamps and solenoids
s 12 V loads
s General purpose power switching.
1.4 Quick reference data
s E_DS(AL)S ≤ 327 mJ
s I_D ≤ 75 A
s R_DSon = 5.9 mΩ (typ)
s P_tot ≤ 157 W.
2. Pinning information
Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol
Pin Description
Simplified outline
1
gate (g)
mb
mb
2
drain (d)
[1]
3
source (s)
mb mounting base;
connected to drain (d)
MBK106
123
SOT78 (TO-220AB)
2
1
3 MBK116
SOT404 (D²-PAK)
[1] It is not possible to make connection to pin 2 of the SOT404 package.
Symbol
d
g
MBB076
s