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BUK9506-40B_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET | |||
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BUK9506-40B
N-channel TrenchMOS logic level FET
Rev. 02 â 25 January 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
 AEC Q101 compliant
 Low conduction losses due to low
on-state resistance
 Suitable for logic level gate drive
sources
 Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
 12 V loads
 Automotive systems
 General purpose power switching
 Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
VDS
ID
Quick reference data
Parameter
drain-source voltage
drain current
Ptot
total power dissipation
Static characteristics
RDSon
drain-source on-state
resistance
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
Dynamic characteristics
QGD
gate-drain charge
Conditions
Min Typ Max Unit
Tj ⥠25 °C; Tj ⤠175 °C
-
-
40 V
VGS = 5 V; Tmb = 25 °C; [1] -
-
75 A
see Figure 1; see Figure 3
Tmb = 25 °C; see Figure 2
-
-
203 W
VGS = 10 V; ID = 25 A;
Tj = 25 °C
VGS = 5 V; ID = 25 A;
Tj = 25 °C; see Figure 11
-
4.1 5
mâ¦
-
5.7 6.4 mâ¦
ID = 75 A; Vsup ⤠40 V;
-
-
494 mJ
RGS = 50 â¦; VGS = 5 V;
Tj(init) = 25 °C; unclamped
VGS = 5 V; ID = 25 A;
VDS = 32 V; Tj = 25 °C;
see Figure 13
-
17 -
nC
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