BUK92150-55A Datasheet, PDF (1/13 Pages) NXP Semiconductors – TrenchMOS logic level FET

BUK92150-55A
TrenchMOS™ logic level FET
Rev. 03 — 30 May 2002
M3D300
Product data
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology, featuring very low on-state resistance.
Product availability:
BUK92150-55A in SOT428 (D-PAK).
2. Features
s TrenchMOS™ technology
s Q101 compliant
s 175 °C rated
s Logic level compatible.
3. Applications
s Automotive and general purpose power switching:
x 12 V and 24 V loads
x Motors, lamps and solenoids.
4. Pinning information
Table 1: Pinning - SOT428 (D-PAK), simplified outline and symbol
Pin
Description
Simplified outline
1
gate (g)
mb
2
drain (d)
3
source (s)
mb
mounting base;
connected to
drain (d)
2
1
3
Top view
MBK091
SOT428 (D-PAK)
Symbol
d
g
MBB076
s