BUK9214-75B Datasheet, PDF (1/10 Pages) NXP Semiconductors – TrenchMOS logic level FET

BUK9214-75B
TrenchMOS™ logic level FET
Rev. 01 — 10 December 2002
M3D300
Objective data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips High-Performance Automotive (HPA) TrenchMOS™ technology, featuring very
low on-state resistance.
Product availability:
BUK9214-75B in SOT428 (D-PAK)
1.2 Features
s TrenchMOS^TM technology
s 175 °C rated
s Q101 compliant
s Logic level compatible
1.3 Applications
s Automotive systems
s Motors, lamps and solenoids
s 12 V, 24 V, and 42 V loads
s General purpose power switching
1.4 Quick reference data
s E_DS(AL)S ≤ 131 mJ
s I_D ≤ 71 A
s R_DSon = 11.9 mΩ (typ)
s P_tot ≤ 150 W
2. Pinning information
Table 1: Pinning - SOT428 (D-PAK), simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d)
[1]
mb
3 source (s)
mb mounting base;
connected to
drain (d)
2
1
Top view
3
MBK091
SOT428 (D-PAK)
[1] It is not possible to make connection to pin 2 of the SOT428 package.
Symbol
d
g
MBB076
s