BUK9214-30A_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

BUK9214-30A
N-channel TrenchMOS logic level FET
Rev. 3 — 14 June 2012
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
 Low conduction losses due to low
on-state resistance
 Q101 compliant
 Suitable for logic level gate drive
sources
 Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
 12 V loads
 Automotive and general purpose
power switching
 Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V_DS
I_D
Quick reference data
Parameter
drain-source voltage
drain current
P_tot
total power dissipation
Static characteristics
R_DSon
drain-source on-state
resistance
Dynamic characteristics
Q_GD
gate-drain charge
Avalanche ruggedness
E_DS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
T_j ≥ 25 °C; T_j ≤ 175 °C
V_GS = 5 V; T_mb = 25 °C; see Figure 1;
see Figure 3
T_mb = 25 °C; see Figure 2
V_GS = 4.5 V; I_D = 25 A; T_j = 25 °C
V_GS = 10 V; I_D = 25 A; T_j = 25 °C
V_GS = 5 V; I_D = 25 A; T_j = 25 °C;
see Figure 11; see Figure 12
V_GS = 5 V; I_D = 25 A; V_DS = 24 V;
T_j = 25 °C; see Figure 13
I_D = 63 A; V_sup ≤ 30 V; R_GS = 50 Ω;
V_GS = 5 V; T_j(init) = 25 °C; unclamped
Min Typ Max Unit
-
-
30 V
-
-
63 A
-
-
107 W
-
-
15.5 mΩ
-
9
12
mΩ
-
11
14
mΩ
-
12.2 -
nC
-
-
230 mJ