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BUK9212-55B_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET | |||
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BUK9212-55B
N-channel TrenchMOS logic level FET
Rev. 03 â 3 February 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
ï® AEC Q101 compliant
ï® Low conduction losses due to low
on-state resistance
ï® Suitable for logic level gate drive
sources
ï® Suitable for thermally demanding
environments due to 185 °C rating
1.3 Applications
ï® 12 V and 24 V loads
ï® Automotive systems
ï® General purpose power switching
ï® Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj ⥠25 °C; Tj ⤠185 °C
voltage
ID
drain current
VGS = 5 V; Tmb = 25 °C;
see Figure 1; see Figure 3
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 5 V; ID = 25 A;
Tj = 25 °C; see Figure 12;
see Figure 11
VGS = 10 V; ID = 25 A;
Tj = 25 °C
Min Typ Max Unit
-
-
55 V
[1] -
-
75 A
-
-
167 W
-
10.2 12 mâ¦
-
8.1 10 mâ¦
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